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CHANNELING OF BORON IONS INTO SILICON.LECROSNIER D; PAUGAM J; GALLOU J et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 7; PP. 323-325; BIBL. 9 REF.Article

EVIDENCE OF DETRIMENTAL SURFACE EFFECTS ON GAAS POWER MESFETSDUMAS JM; PAUGAM J; LE MOUELLIC C et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1094-1095; BIBL. 9 REF.Article

INFLUENCE OF PHOSPHORUS-INDUCED POINT DEFECTS ON A GOLD-GETTERING MECHANISM IN SILICONLECROSNIER D; PAUGAM J; RICHOU F et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1036-1038; BIBL. 13 REF.Article

LONG-RANGE ENHANCEMENT OF BORON DIFFUSIVITY INDUCED BY A HIGH-SURFACE-CONCENTRATION PHOSPHORUS DIFFUSIONLECROSNIER D; GAUNEAU M; PAUGAM J et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 3; PP. 224-226; BIBL. 15 REF.Article

Création d'une classe en intégration pour déficients auditifs dans une école primaire et maternelle de la circonscription de Saint-Joseph, la RéunionPAUGAM, J.1985, 132 p.Thesis

GOLD GETTERING IN SILICON BY PHOSPHOROUS DIFFUSION AND ARGON IMPLANTATION: MECHANISMS AND LIMITATIONSLECROSNIER D; PAUGAM J; PELOUS G et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5090-5097; BIBL. 38 REF.Article

N-CHANNEL MISFETS ON SEMI-INSULATING INP FOR LOGIC APPLICATIONSHENRY L; LECROSNIER D; L'HARIDON H et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 102-103; BIBL. 5 REF.Article

Ioversol 350 : expérience clinique en tomodensitométrie crânienne = Loversol 350: clinical experience in cranial computed tomographyTHERON, J; PAUGAM, J. P; COURTHEOUX, P et al.Annales de radiologie (Paris). 1991, Vol 34, Num 6-7, pp 413-417, issn 0003-4185Article

Comparaison de la fiabilité opérationnelle des modules optiques équipant les systèmes à 34 Mbit/s de France Télécom = Comparison of the operational reliability of optical emitters fitted in FRANCE TELECOM 34Mbit/s systemsGARNIER, N; PAUGAM, J; GUYMARD, P et al.Annales des télécommunications. 1990, Vol 45, Num 11-12, pp 630-634, issn 0003-4347, 5 p.Article

Investigation d'une suspicion d'épidémie de gale à Saint Paul, La Réunion, avril-mai 2007BALLEYDIER, E; RENAULT, P; LASSALLE, C et al.2007, 10 p.Book

Mn(III)-mediated electrochemical C,C-bound formation : radical addition of polyhalomethanes to olefinsNOHAIR, K; LACHAISE, I; PAUGAM, J.-P et al.Tetrahedron letters. 1992, Vol 33, Num 2, pp 213-216, issn 0040-4039Article

Comparative reliability study of GaAs power MESFETs: mechanisms for surface-induced degradation and a reliable solutionDUMAS, J. M; LECROSNIER, D; PAUGAM, J et al.Electronics Letters. 1985, Vol 21, Num 3, pp 115-116, issn 0013-5194Article

Biological activity of new phosphorylated analogues of oxotremorineCORBEL, B; PAUGAM, J. P; PENNEC, J.-P et al.Pharmacological research communications. 1984, Vol 16, Num 9, pp 885-898, issn 0031-6989Article

Electrochemical study of the formation of cyclopropanes from gem-dihalocompounds and alkenes catalyzed by copper 1,10-phenanthroline complexesLEONEL, E; DOLHEM, E; DEVAUD, M et al.Electrochimica acta. 1997, Vol 42, Num 13-14, pp 2125-2132, issn 0013-4686Article

Mn(III)-mediated in-cell electrochemical addition of active methylene compounds to olefins : synthetic and mechanistic aspectsNEDELEC, J.-Y; LACHAISE, I; KHADDOUJ NOHAIR et al.Bulletin de la Société chimique de France. 1995, Vol 132, Num 8, pp 843-849, issn 0037-8968Article

Stability of interfaces in pseudomorphic InGaAs HEMTsAUDREN, P; DUMAS, J. M; MOTTET, S et al.Quality and reliability engineering international. 1992, Vol 8, Num 3, pp 279-282, issn 0748-8017Article

Caractérisation et résultats de fiabilité de transistors à haute mobilité électronique (HEMT) = Characterization and reliability results on high electron mobility transistors (HEMT)ABDENABI BELHADJ; AUDREN, P; VUCHENER, C et al.Annales des télécommunications. 1990, Vol 45, Num 11-12, pp 585-590, issn 0003-4347, 6 p.Article

L'impossible maîtrise de la population pénitentiaire?BEGASSAT, L; DE BRUNHOFF, M; ROMENSKY, A et al.sd, 30 p.Book

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